N-channel Power MOSFET uses MDmesh M2 technology with a 600 V drain-source rating and 20 A continuous drain current at 25 °C case temperature. The device provides 140 mΩ typical and 165 mΩ maximum on-resistance at 10 V gate drive and 10 A drain current. It is packaged in an insulated TO-220FP ultra narrow leads package with 2.5 kV RMS isolation withstand voltage from the leads to an external heat sink. The MOSFET is 100% avalanche tested, Zener-protected, and specified for switching applications including LLC resonant converters.
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| Transistor Type | N-channel Power MOSFET |
| Drain-Source Voltage | 600V |
| Continuous Drain Current at TC=25°C | 20A |
| Continuous Drain Current at TC=100°C | 13A |
| Pulsed Drain Current | 80A |
| Static Drain-Source On-Resistance | 140 typ, 165 maxmΩ |
| Gate-Source Voltage | ±25V |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Total Power Dissipation at TC=25°C | 30W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 4.2°C/W |
| Junction-to-Ambient Thermal Resistance | 62.5°C/W |
| Input Capacitance | 1360 typpF |
| Output Capacitance | 88 typpF |
| Reverse Transfer Capacitance | 2 typpF |
| Total Gate Charge | 34 typnC |
| Turn-On Delay Time | 20.2 typns |
| Turn-Off Delay Time | 66 typns |
| Single Pulse Avalanche Energy | 250mJ |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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