N-channel SuperMESH3™ Power MOSFET, 1050V Vdss, 1.4A continuous drain current, and 8 Ohm typical Rds(on). Features include 6ns turn-on delay, 27ns turn-off delay, and 50ns fall time. Operates from -55°C to 150°C with 20W power dissipation. Packaged in a TO-3PF through-hole mount, this RoHS compliant component offers lead-free construction.
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STFW1N105K3 technical specifications.
General
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Breakdown Voltage | 1.05kV |
| Drain to Source Resistance | 8R |
| Drain to Source Voltage (Vdss) | 1.05kV |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.7mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 11R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 6ns |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFW1N105K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFW1N105K3 to view detailed technical specifications.
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