N-channel SuperMESH3™ Power MOSFET, 1050V Vdss, 1.4A continuous drain current, and 8 Ohm typical Rds(on). Features include 6ns turn-on delay, 27ns turn-off delay, and 50ns fall time. Operates from -55°C to 150°C with 20W power dissipation. Packaged in a TO-3PF through-hole mount, this RoHS compliant component offers lead-free construction.
MountingThrough Hole
PolarityN-CHANNEL
Power20W
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Technical Specifications
Stmicroelectronics STFW1N105K3 technical specifications.
General
Continuous Drain Current (ID)
1.4A
Drain to Source Breakdown Voltage
1.05kV
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
1.05kV
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
26.7mm
Input Capacitance
180pF
Lead Free
Lead Free
Length
15.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
20W
Radiation Hardening
No
Rds On Max
11R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
27ns
Turn-On Delay Time
6ns
Width
5.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFW1N105K3 Datasheet
Download the complete datasheet for Stmicroelectronics STFW1N105K3 to view detailed technical specifications.
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