N-channel PowerMESH™ power MOSFET featuring 1500V drain-source breakdown voltage and 2.5A continuous drain current. Offers a typical 6 Ohm drain-source on-resistance and a maximum power dissipation of 63W. Designed for through-hole mounting in a TO-3PF package, this component operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and a 45ns turn-off delay.
MountingThrough Hole
PolarityN-CHANNEL
Power63W
Quick Jump:
Technical Specifications
Stmicroelectronics STFW3N150 technical specifications.
General
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
1.5kV
Drain to Source Resistance
9R
Drain to Source Voltage (Vdss)
1.5kV
Drain-source On Resistance-Max
9R
Fall Time
61ns
Gate to Source Voltage (Vgs)
30V
Height
26.7mm
Input Capacitance
939pF
Lead Free
Lead Free
Length
15.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
63W
Radiation Hardening
No
Rds On Max
9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Threshold Voltage
4V
Turn-Off Delay Time
45ns
Turn-On Delay Time
24ns
Width
5.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STFW3N150 Datasheet
Download the complete datasheet for Stmicroelectronics STFW3N150 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.