N-channel Power MOSFET featuring 1500V drain-source breakdown voltage and 4A continuous drain current. Offers a maximum drain-source on-resistance of 7 Ohms. Designed with a 35ns turn-on delay and 45ns fall time, this component operates within a -55°C to 150°C temperature range. It is RoHS compliant and presented in a TO-3PF package for through-hole mounting.
MountingThrough Hole
PolarityN-CHANNEL
Power63W
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Technical Specifications
Stmicroelectronics STFW4N150 technical specifications.
General
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 7R |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.7mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 35ns |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STFW4N150 Datasheet
Download the complete datasheet for Stmicroelectronics STFW4N150 to view detailed technical specifications.
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