N-channel Power MOSFET featuring 1500V drain-source breakdown voltage and 4A continuous drain current. Offers a maximum drain-source on-resistance of 7 Ohms. Designed with a 35ns turn-on delay and 45ns fall time, this component operates within a -55°C to 150°C temperature range. It is RoHS compliant and presented in a TO-3PF package for through-hole mounting.
Sign in to ask questions about the Stmicroelectronics STFW4N150 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STFW4N150 technical specifications.
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 7R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Drain-source On Resistance-Max | 7R |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.7mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 35ns |
| Width | 5.7mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STFW4N150 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
