Surface mount Insulated Gate Bipolar Transistor (IGBT) with 600V collector-emitter breakdown voltage and 20A maximum collector current. Features a 2.5V collector-emitter saturation voltage and 22ns reverse recovery time. Operates across a -55°C to 150°C temperature range with 65W maximum power dissipation. Packaged in D2PAK for tape and reel distribution.
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Stmicroelectronics STGB10NC60HDT4 technical specifications.
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 4.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | SMD/SMT |
| Width | 9.35mm |
| RoHS | Compliant |
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