Surface mount Insulated Gate Bipolar Transistor (IGBT) with 600V collector-emitter breakdown voltage and 20A maximum collector current. Features a 2.5V collector-emitter saturation voltage and 22ns reverse recovery time. Operates across a -55°C to 150°C temperature range with 65W maximum power dissipation. Packaged in D2PAK for tape and reel distribution.
PackageD2PAK
MountingSurface Mount
Power65W
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Technical Specifications
Stmicroelectronics STGB10NC60HDT4 technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Height
4.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Breakdown Voltage
600V
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Power Dissipation
65W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
22ns
RoHS Compliant
Yes
Series
PowerMESH™
Termination
SMD/SMT
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB10NC60HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NC60HDT4 to view detailed technical specifications.
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