600V, 10A Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a 10A continuous drain current. Offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 65W. Packaged in a D2PAK for efficient thermal management, this IGBT is designed for short-circuit ruggedness.
PackageD2PAK
Current Rating10A
MountingSurface Mount
Power60W
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Technical Specifications
Stmicroelectronics STGB10NC60KDT4 technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 4.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| Weight | 0.079014oz |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB10NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NC60KDT4 to view detailed technical specifications.
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