600V, 10A Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a 10A continuous drain current. Offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 65W. Packaged in a D2PAK for efficient thermal management, this IGBT is designed for short-circuit ruggedness.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STGB10NC60KDT4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STGB10NC60KDT4 technical specifications.
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 4.6mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| Weight | 0.079014oz |
| Width | 9.35mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGB10NC60KDT4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
