600V, 10A Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V collector-emitter breakdown voltage and a 10A continuous drain current. Offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 65W. Packaged in a D2PAK for efficient thermal management, this IGBT is designed for short-circuit ruggedness.
PackageD2PAK
Current Rating10A
MountingSurface Mount
Power60W
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Technical Specifications
Stmicroelectronics STGB10NC60KDT4 technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Voltage (Vdss)
600V
Height
4.6mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Breakdown Voltage
600V
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Surface Mount
Package Quantity
1000
Packaging
Tape and Reel
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
22ns
RoHS Compliant
Yes
Series
PowerMESH™
Termination
SMD/SMT
Turn-Off Delay Time
72ns
Turn-On Delay Time
17ns
DC Rated Voltage
600V
Weight
0.079014oz
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGB10NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGB10NC60KDT4 to view detailed technical specifications.
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