
N-channel IGBT with 600V collector-emitter breakdown voltage and 10A continuous drain current. Features a 2.5V collector-emitter saturation voltage and 65W maximum power dissipation. Operates from -55°C to 150°C and is surface mountable in a D2PAK package. RoHS compliant with 17ns turn-on and 72ns turn-off delay times.
Stmicroelectronics STGB10NC60KT4 technical specifications.
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGB10NC60KT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
