The STGB6NC60HD-1 is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 15A. It is packaged in a TO-262-3 case and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 56W. The STGB6NC60HD-1 is compliant with RoHS regulations and is part of the PowerMESH series from STmicroelectronics.
PackageTO-262-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGB6NC60HD-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGB6NC60HD-1 Datasheet
Download the complete datasheet for Stmicroelectronics STGB6NC60HD-1 to view detailed technical specifications.
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