N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 20A. This surface-mount device, housed in a DPAK package, offers a maximum power dissipation of 62W and a low collector-emitter saturation voltage of 2V. With a 600V VCEO rating, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and a 72ns turn-off delay, with a 22ns reverse recovery time.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD10NC60KDT4 technical specifications.
General
Package/Case
DPAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Height
2.4mm
Input Type
STANDARD
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
600V
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
22ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
17ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGD10NC60KDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD10NC60KDT4 to view detailed technical specifications.
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