N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring a 600V collector-emitter breakdown voltage and a maximum collector current of 20A. This surface-mount device, housed in a DPAK package, offers a maximum power dissipation of 62W and a low collector-emitter saturation voltage of 2V. With a 600V VCEO rating, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 17ns turn-on delay and a 72ns turn-off delay, with a 22ns reverse recovery time.
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Stmicroelectronics STGD10NC60KDT4 technical specifications.
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 2.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 17ns |
| Width | 6.2mm |
| RoHS | Compliant |
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