Automotive-grade Insulated Gate Bipolar Transistor (IGBT) with 420V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a low 1.35V Collector Emitter Saturation Voltage and 175°C Max Operating Temperature. Surface mountable in a DPAK package, this component offers 125W Max Power Dissipation and is RoHS compliant. Ideal for demanding applications requiring robust performance and reliability.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD18N40LZT4 technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 420V |
| Collector Emitter Saturation Voltage | 1.35V |
| Collector Emitter Voltage (VCEO) | 360V |
| Collector-emitter Voltage-Max | 1.7V |
| Height | 2.4mm |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 420V |
| Max Collector Current | 25A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 13.5s |
| Turn-On Delay Time | 0.65s |
| Weight | 0.012346oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD18N40LZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD18N40LZT4 to view detailed technical specifications.
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