Automotive-grade Insulated Gate Bipolar Transistor (IGBT) with 420V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a low 1.35V Collector Emitter Saturation Voltage and 175°C Max Operating Temperature. Surface mountable in a DPAK package, this component offers 125W Max Power Dissipation and is RoHS compliant. Ideal for demanding applications requiring robust performance and reliability.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD18N40LZT4 technical specifications.
General
Package/Case
DPAK
Collector Emitter Breakdown Voltage
420V
Collector Emitter Saturation Voltage
1.35V
Collector Emitter Voltage (VCEO)
360V
Collector-emitter Voltage-Max
1.7V
Height
2.4mm
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
420V
Max Collector Current
25A
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
13.5s
Turn-On Delay Time
0.65s
Weight
0.012346oz
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGD18N40LZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD18N40LZT4 to view detailed technical specifications.
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