The STGD6NC60H-1 is a 600V insulated gate bipolar transistor with a maximum collector current of 15A. It features a TO-251-3 package and is designed for high-power applications. The device operates within a temperature range of -55°C to 150°C and is compliant with RoHS regulations. With a maximum power dissipation of 62.5W, this IGBT is suitable for demanding power management systems.
PackageTO-251-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STGD6NC60H-1 technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD6NC60H-1 Datasheet
Download the complete datasheet for Stmicroelectronics STGD6NC60H-1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
