The STGD7NB60KT4 is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) with a maximum collector current of 14A and maximum power dissipation of 70W. It is packaged in a TO-252-3 surface mount package and is suitable for operating temperatures between -65°C and 150°C. The device is RoHS compliant and is part of the PowerMESH series.
PackageTO-252-3
Current Rating7A
MountingSurface Mount
Power70W
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Technical Specifications
Stmicroelectronics STGD7NB60KT4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 7A |
| Input Type | STANDARD |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD7NB60KT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD7NB60KT4 to view detailed technical specifications.
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