The STGD7NB60ST4 is a 600V insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a continuous drain current of 7A. It is packaged in a TO-252-3 surface mount package and has a maximum operating temperature of 150°C. The device is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The transistor has a maximum power dissipation of 55W and a maximum collector current of 15A.
PackageTO-252-3
Current Rating7A
MountingSurface Mount
Power55W
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Technical Specifications
Stmicroelectronics STGD7NB60ST4 technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 7A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD7NB60ST4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD7NB60ST4 to view detailed technical specifications.
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