N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and 14A continuous collector current. This very fast IGBT offers a 2.5V collector-emitter saturation voltage and a maximum collector current of 25A. Designed for surface mounting in a DPAK package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 70W. Key performance characteristics include a turn-on delay time of 18.5ns and a turn-off delay time of 116ns. This RoHS compliant component is supplied on tape and reel.
PackageDPAK
Current Rating7A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD7NC60HT4 technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 14A |
| Current Rating | 7A |
| Height | 2.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 116ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 600V |
| Weight | 0.139332oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD7NC60HT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD7NC60HT4 to view detailed technical specifications.
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