Very fast IGBT with 600V collector-emitter breakdown voltage and 50A continuous collector current. Features a low 2.5V collector-emitter saturation voltage and 260W maximum power dissipation. Designed for high-frequency switching applications with fast turn-on (43ns) and turn-off (140ns) delay times. Packaged in SOT-227-4 for chassis or surface mounting, this RoHS compliant component operates from -55°C to 150°C.
PackageSOT-227-4
MountingChassis Mount, Surface Mount, Screw
Power260W
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Technical Specifications
Stmicroelectronics STGE50NC60VD technical specifications.
General
Package/Case
SOT-227-4
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Height
12.2mm
Input
Standard
Input Capacitance
4.55nF
Lead Free
Lead Free
Length
38.2mm
Max Breakdown Voltage
600V
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
260W
Mount
Chassis Mount, Surface Mount, Screw
NTC Thermistor
No
Package Quantity
100
Packaging
Rail/Tube
Power Dissipation
260W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
140ns
Turn-On Delay Time
43ns
Width
24.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGE50NC60VD Datasheet
Download the complete datasheet for Stmicroelectronics STGE50NC60VD to view detailed technical specifications.
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