
Very fast IGBT with 600V collector-emitter breakdown voltage and 50A continuous collector current. Features a low 2.5V collector-emitter saturation voltage and 260W maximum power dissipation. Designed for high-frequency switching applications with fast turn-on (43ns) and turn-off (140ns) delay times. Packaged in SOT-227-4 for chassis or surface mounting, this RoHS compliant component operates from -55°C to 150°C.
Stmicroelectronics STGE50NC60VD technical specifications.
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 12.2mm |
| Input | Standard |
| Input Capacitance | 4.55nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Chassis Mount, Surface Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 43ns |
| Width | 24.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGE50NC60VD to view detailed technical specifications.
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