Short-circuit rugged Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 11A Continuous Collector Current. Features a 2V Collector Emitter Saturation Voltage and 28W Max Power Dissipation. This through-hole mounted component operates from -55°C to 150°C and offers a 37ns reverse recovery time. Designed with a TO-220-3 package, it is RoHS compliant.
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Stmicroelectronics STGF14NC60KD technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 7A |
| Current Rating | 11A |
| Height | 9.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 11A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 116ns |
| Turn-On Delay Time | 22.5ns |
| DC Rated Voltage | 600V |
| Weight | 0.08113oz |
| Width | 4.6mm |
| RoHS | Compliant |
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