Short-circuit rugged Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 11A Continuous Collector Current. Features a 2V Collector Emitter Saturation Voltage and 28W Max Power Dissipation. This through-hole mounted component operates from -55°C to 150°C and offers a 37ns reverse recovery time. Designed with a TO-220-3 package, it is RoHS compliant.
PackageTO-220-3
Current Rating11A
MountingThrough Hole
Power28W
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Technical Specifications
Stmicroelectronics STGF14NC60KD technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
7A
Current Rating
11A
Height
9.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
11A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
28W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
28W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
116ns
Turn-On Delay Time
22.5ns
DC Rated Voltage
600V
Weight
0.08113oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGF14NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGF14NC60KD to view detailed technical specifications.
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