N-channel Insulated Gate Bipolar Transistor (IGBT) featuring 600V collector-emitter breakdown voltage and 6A continuous collector current. This very fast IGBT offers a low collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 20W. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 76ns turn-off delay, with a 21ns reverse recovery time. This RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220-3
Current Rating6A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF6NC60HD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 6A |
| Current Rating | 6A |
| Height | 9.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Weight | 0.08113oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF6NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGF6NC60HD to view detailed technical specifications.
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