N-channel Insulated Gate Bipolar Transistor (IGBT) featuring 600V collector-emitter breakdown voltage and 6A continuous collector current. This very fast IGBT offers a low collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 20W. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 76ns turn-off delay, with a 21ns reverse recovery time. This RoHS compliant component is supplied in rail/tube packaging.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STGF6NC60HD datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 6A |
| Current Rating | 6A |
| Height | 9.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Weight | 0.08113oz |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGF6NC60HD to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
