N-channel Insulated Gate Bipolar Transistor (IGBT) featuring 600V collector-emitter breakdown voltage and 6A continuous collector current. This very fast IGBT offers a low collector-emitter saturation voltage of 1.9V and a maximum power dissipation of 20W. Designed for through-hole mounting in a TO-220-3 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 12ns turn-on delay and a 76ns turn-off delay, with a 21ns reverse recovery time. This RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220-3
Current Rating6A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF6NC60HD technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
6A
Current Rating
6A
Height
9.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
20W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
21ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
76ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Weight
0.08113oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGF6NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGF6NC60HD to view detailed technical specifications.
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