Insulated Gate Bipolar Transistor (IGBT) with 600V Collector Emitter Breakdown Voltage and 15A Continuous Collector Current. Features a low 1.2V Collector Emitter Saturation Voltage and 1.1µs Turn-On Delay Time. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 25W.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGF7NB60SL technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.6V |
| Continuous Collector Current | 15A |
| Height | 9.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-On Delay Time | 1.1us |
| Weight | 0.08113oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGF7NB60SL Datasheet
Download the complete datasheet for Stmicroelectronics STGF7NB60SL to view detailed technical specifications.
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