N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 10A Max Collector Current. This very fast IGBT offers a 6A current rating and 25W power dissipation, with a Collector Emitter Saturation Voltage of 2.5V. It includes an ultrafast diode with a 37ns reverse recovery time. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220-3
Current Rating6A
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STGF7NC60HD technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
6A
Height
9.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
25W
Radiation Hardening
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
18.5ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGF7NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGF7NC60HD to view detailed technical specifications.
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