N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 10A Max Collector Current. This very fast IGBT offers a 6A current rating and 25W power dissipation, with a Collector Emitter Saturation Voltage of 2.5V. It includes an ultrafast diode with a 37ns reverse recovery time. Designed for through-hole mounting in a TO-220-3 package, this RoHS compliant component operates from -55°C to 150°C.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 6A |
| Height | 9.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
| RoHS | Compliant |
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