The STGP10H60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 20A and a maximum power dissipation of 115W. It is packaged in a TO-220-3 package and is designed for through hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is lead free and RoHS compliant.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10H60DF technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.95V |
| Height | 15.75mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 107ns |
| RoHS Compliant | Yes |
| Weight | 0.211644oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP10H60DF Datasheet
Download the complete datasheet for Stmicroelectronics STGP10H60DF to view detailed technical specifications.
No datasheet is available for this part.