600V Insulated Gate Bipolar Transistor (IGBT) with a 10A continuous collector current and a maximum collector current of 29A. Features a low collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 80W. Packaged in a TO-220 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
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Stmicroelectronics STGP10NB60S technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.75V |
| Continuous Collector Current | 10A |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 29A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-On Delay Time | 7us |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.6mm |
| RoHS | Compliant |
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