600V Insulated Gate Bipolar Transistor (IGBT) with a 10A continuous collector current and a maximum collector current of 29A. Features a low collector-emitter saturation voltage of 1.7V and a maximum power dissipation of 80W. Packaged in a TO-220 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220
Current Rating10A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10NB60S technical specifications.
General
Package/Case
TO-220
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.75V
Continuous Collector Current
10A
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Voltage (Vdss)
600V
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
29A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Turn-On Delay Time
7us
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP10NB60S Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NB60S to view detailed technical specifications.
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