600V, 10A Insulated Gate Bipolar Transistor (IGBT) featuring a low collector-emitter saturation voltage of 1.75V and a soft, fast recovery diode with a 37ns reverse recovery time. This through-hole component offers a maximum collector current of 29A and a power dissipation of 80W, operating within a temperature range of -65°C to 150°C. Packaged in a TO-220-3 case, it is lead-free, RoHS compliant, and designed for standard input applications.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10NB60SD technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.75V
Continuous Drain Current (ID)
10A
Current Rating
20A
Drain to Source Breakdown Voltage
600V
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
29A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
1.2us
Turn-On Delay Time
0.7us
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP10NB60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NB60SD to view detailed technical specifications.
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