600V, 10A Insulated Gate Bipolar Transistor (IGBT) featuring a low collector-emitter saturation voltage of 1.75V and a soft, fast recovery diode with a 37ns reverse recovery time. This through-hole component offers a maximum collector current of 29A and a power dissipation of 80W, operating within a temperature range of -65°C to 150°C. Packaged in a TO-220-3 case, it is lead-free, RoHS compliant, and designed for standard input applications.
PackageTO-220-3
Current Rating20A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP10NB60SD technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.75V |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 29A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 1.2us |
| Turn-On Delay Time | 0.7us |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP10NB60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NB60SD to view detailed technical specifications.
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