N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a 20A continuous current rating. Offers a low collector-emitter saturation voltage of 2V and a maximum power dissipation of 65W. Packaged in a TO-220 through-hole mount with a 3-pin configuration, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220
Current Rating20A
MountingThrough Hole
Power25W
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Technical Specifications
Stmicroelectronics STGP10NC60KD technical specifications.
General
Package/Case
TO-220
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
20A
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
25W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
22ns
RoHS Compliant
Yes
Series
PowerMESH™
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP10NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NC60KD to view detailed technical specifications.
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