N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a 20A continuous current rating. Offers a low collector-emitter saturation voltage of 2V and a maximum power dissipation of 65W. Packaged in a TO-220 through-hole mount with a 3-pin configuration, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-220
Current Rating20A
MountingThrough Hole
Power25W
Quick Jump:
Technical Specifications
Stmicroelectronics STGP10NC60KD technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 20A |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 22ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP10NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGP10NC60KD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
