600V, 25A Insulated Gate Bipolar Transistor (IGBT) in a TO-220 package. Features a 600V collector-emitter voltage rating, 2V collector-emitter saturation voltage, and 10A forward current. Offers a maximum power dissipation of 80W and operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component boasts a 37ns reverse recovery time and 22.5ns turn-on delay.
PackageTO-220
Current Rating25A
MountingThrough Hole
Power28W
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Technical Specifications
Stmicroelectronics STGP14NC60KD technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
600V
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
25A
Forward Current
10A
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
28W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
116ns
Turn-On Delay Time
22.5ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP14NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGP14NC60KD to view detailed technical specifications.
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