
600V, 25A Insulated Gate Bipolar Transistor (IGBT) in a TO-220 package. Features a 600V collector-emitter voltage rating, 2V collector-emitter saturation voltage, and 10A forward current. Offers a maximum power dissipation of 80W and operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component boasts a 37ns reverse recovery time and 22.5ns turn-on delay.
Stmicroelectronics STGP14NC60KD technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 25A |
| Forward Current | 10A |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 116ns |
| Turn-On Delay Time | 22.5ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGP14NC60KD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
