N-channel Insulated Gate Bipolar Transistor (IGBT) chip featuring 600V collector-emitter breakdown voltage and a maximum collector current of 40A. This device offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 130W. Packaged in a TO-220 through-hole mount with 3 pins plus tab, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay and a 97ns turn-off delay, with a 31ns reverse recovery time. RoHS compliant and lead-free.
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| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Height | 15.75mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 31ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 97ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |
| RoHS | Compliant |
