The STGP19NC60SD is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 40A and a maximum power dissipation of 130W. It is packaged in a TO-220 case with a flange mount and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The STGP19NC60SD is part of the PowerMESH series from STmicroelectronics.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP19NC60SD technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.9V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 31ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 175ns |
| Turn-On Delay Time | 17.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP19NC60SD Datasheet
Download the complete datasheet for Stmicroelectronics STGP19NC60SD to view detailed technical specifications.
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