The STGP20H60DF is a TO-220 packaged insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 40A. It has a maximum power dissipation of 167W and operates over a temperature range of -55°C to 175°C. The device is lead-free and RoHS compliant, and is packaged in a rail or tube format with 50 units per package. The transistor features a reverse recovery time of 90ns and a collector-emitter saturation voltage of 2V.
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Stmicroelectronics STGP20H60DF technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reverse Recovery Time | 90ns |
| RoHS Compliant | Yes |
| Series | STGP20H60DF |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGP20H60DF to view detailed technical specifications.
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