The STGP3NB60HD is a 600V insulated gate bipolar transistor with a maximum collector current of 10A and a maximum power dissipation of 50W. It is packaged in a TO-220-3 flange mount package and is suitable for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. It features a reverse recovery time of 45ns and a collector-emitter saturation voltage of 2.8V.
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Stmicroelectronics STGP3NB60HD technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector-emitter Voltage-Max | 2.8V |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 6A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 50W |
| Reverse Recovery Time | 45ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGP3NB60HD to view detailed technical specifications.
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