The STGP6NC60H is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 7A. It has a maximum power dissipation of 56W and is packaged in a TO-220-3 case with a through-hole mount. The transistor operates within a temperature range of -55°C to 150°C. It is not radiation hardened and is part of the PowerMESH series from STmicroelectronics.
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP6NC60H technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Input Type | STANDARD |
| Max Collector Current | 7A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 21ns |
| Series | PowerMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP6NC60H Datasheet
Download the complete datasheet for Stmicroelectronics STGP6NC60H to view detailed technical specifications.
No datasheet is available for this part.