N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a 15A maximum collector current. This very fast IGBT offers a 1.9V collector-emitter saturation voltage and a 21ns reverse recovery time. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 56W. RoHS compliant and lead-free.
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Stmicroelectronics STGP6NC60HD technical specifications.
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 15A |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 76ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
| RoHS | Compliant |
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