N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a 2.5V Collector Emitter Saturation Voltage and 80W Power Dissipation. Designed for through-hole mounting in a TO-220-3 package. Operates from -55°C to 150°C and offers 18.5ns turn-on and 72ns turn-off delay times. RoHS compliant and lead-free.
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| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 14A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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