N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 25A Max Collector Current. Features a 2.5V Collector Emitter Saturation Voltage and 80W Power Dissipation. Designed for through-hole mounting in a TO-220-3 package. Operates from -55°C to 150°C and offers 18.5ns turn-on and 72ns turn-off delay times. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating14A
MountingThrough Hole
Power80W
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Technical Specifications
Stmicroelectronics STGP7NC60H technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Current Rating
14A
Input Type
STANDARD
Lead Free
Lead Free
Max Breakdown Voltage
600V
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
1
Packaging
Rail/Tube
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
18.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP7NC60H Datasheet
Download the complete datasheet for Stmicroelectronics STGP7NC60H to view detailed technical specifications.
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