N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 14A, with a peak current rating of 25A. Offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 80W. Packaged in a TO-220 configuration with a 3-pin (3+Tab) through-hole mount, operating across a temperature range of -55°C to 150°C. RoHS compliant with a 37ns reverse recovery time.
PackageTO-220
Current Rating14A
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STGP7NC60HD technical specifications.
General
Package/Case
TO-220
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
14A
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Voltage (Vdss)
600V
Height
9.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
1000
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
72ns
Turn-On Delay Time
18.5ns
DC Rated Voltage
600V
Weight
0.08113oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGP7NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGP7NC60HD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
