N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications. Features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 14A, with a peak current rating of 25A. Offers a low collector-emitter saturation voltage of 2.5V and a maximum power dissipation of 80W. Packaged in a TO-220 configuration with a 3-pin (3+Tab) through-hole mount, operating across a temperature range of -55°C to 150°C. RoHS compliant with a 37ns reverse recovery time.
PackageTO-220
Current Rating14A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGP7NC60HD technical specifications.
General
| Package/Case | TO-220 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 14A |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 14A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 9.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 18.5ns |
| DC Rated Voltage | 600V |
| Weight | 0.08113oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGP7NC60HD Datasheet
Download the complete datasheet for Stmicroelectronics STGP7NC60HD to view detailed technical specifications.
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