The STGW20H60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It features a TO-247 package and is designed for through-hole mounting. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 167W. The STGW20H60DF is compliant with RoHS regulations and is available in a rail/tube packaging configuration with 30 units per package.
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Stmicroelectronics STGW20H60DF technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Length | 15.75mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 167W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 167W |
| Radiation Hardening | No |
| Reverse Recovery Time | 90ns |
| RoHS Compliant | Yes |
| Width | 5.15mm |
| RoHS | Compliant |
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