N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter breakdown voltage and a 30A continuous collector current, with a maximum collector current of 60A. Operates within a temperature range of -55°C to 150°C and offers a maximum power dissipation of 200W. Packaged in a TO-247 3-pin (3+Tab) configuration for through-hole mounting. Includes a 2.5V collector-emitter saturation voltage and a reverse recovery time of 44ns.
PackageTO-247
Current Rating30A
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STGW20NC60VD technical specifications.
General
Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
30A
Current Rating
30A
Height
20.15mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
600
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
44ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
100ns
Turn-On Delay Time
31ns
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGW20NC60VD Datasheet
Download the complete datasheet for Stmicroelectronics STGW20NC60VD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
