N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V collector-emitter voltage and 50A continuous collector current. This single IGBT chip is housed in a TO-247 package with 3 pins and a tab, designed for through-hole mounting. Maximum power dissipation reaches 330000mW, with a typical collector-emitter saturation voltage of 2.15V. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STGW25H120F technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1200V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
50A
Maximum Power Dissipation
330000mW
Typical Collector Emitter Saturation Voltage
2.15V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Stmicroelectronics STGW25H120F Datasheet
Download the complete datasheet for Stmicroelectronics STGW25H120F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.