N-channel Insulated Gate Bipolar Transistor (IGBT) for high-voltage applications. Features a 1200V collector-emitter voltage and 50A continuous collector current. This single IGBT chip is housed in a TO-247 package with 3 pins and a tab, designed for through-hole mounting. Maximum power dissipation reaches 330000mW, with a typical collector-emitter saturation voltage of 2.15V. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW25H120F technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.15(Max) |
| Package Height (mm) | 20.15(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 1200V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 50A |
| Maximum Power Dissipation | 330000mW |
| Typical Collector Emitter Saturation Voltage | 2.15V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics STGW25H120F Datasheet
Download the complete datasheet for Stmicroelectronics STGW25H120F to view detailed technical specifications.
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