N-channel Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power switching applications. Features a 600V breakdown voltage and a continuous collector current rating of 60A. Offers a low saturation voltage and fast switching speeds, ideal for demanding power electronics. Packaged in a 3-pin TO-247 configuration with an integrated tab for enhanced thermal management.
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Technical Specifications
Stmicroelectronics STGW30H60DFB technical specifications.
Compliance
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics STGW30H60DFB Datasheet
Download the complete datasheet for Stmicroelectronics STGW30H60DFB to view detailed technical specifications.
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