The STGW30NC60KD is a 600V insulated gate bipolar transistor with a maximum collector current of 60A. It is packaged in a TO-247-3 flange mount package and has a maximum power dissipation of 200W. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is suitable for use in high-power applications such as motor drives and power supplies.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW30NC60KD technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 29ns |
| Weight | 1.340411oz |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW30NC60KD Datasheet
Download the complete datasheet for Stmicroelectronics STGW30NC60KD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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