N-channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V collector-emitter breakdown voltage and a 60A continuous collector current rating. Designed with a TO-247 package for through-hole mounting, offering a maximum power dissipation of 200W. Includes a 2.1V collector-emitter saturation voltage and a 40ns reverse recovery time. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Stmicroelectronics STGW30NC60WD technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 60A |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 600 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 40ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 118ns |
| Turn-On Delay Time | 29.5ns |
| DC Rated Voltage | 600V |
| Width | 5.15mm |
| RoHS | Compliant |
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