The STGW40V60DF is a 600V insulated gate bipolar transistor packaged in a TO-247 case. It features a maximum collector current of 80A and a maximum power dissipation of 283W. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations. The TO-247 package is suitable for through-hole mounting.
Sign in to ask questions about the Stmicroelectronics STGW40V60DF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STGW40V60DF technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 283W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 283W |
| Radiation Hardening | No |
| Reverse Recovery Time | 41ns |
| RoHS Compliant | Yes |
| Series | STGW40V60DF |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGW40V60DF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
