N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a 600V collector-emitter voltage, 70A continuous collector current, and 250W maximum power dissipation. Offers a typical collector-emitter saturation voltage of 1.65V and operates across a temperature range of -55°C to 150°C. The 3-pin configuration includes a tab for enhanced thermal management.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW45HF60WD technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.75(Max) |
| Package Width (mm) | 5.15(Max) |
| Package Height (mm) | 20.15(Max) |
| Seated Plane Height (mm) | 24.45(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-247 |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 70A |
| Maximum Power Dissipation | 250000mW |
| Typical Collector Emitter Saturation Voltage | 1.65V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STGW45HF60WD Datasheet
Download the complete datasheet for Stmicroelectronics STGW45HF60WD to view detailed technical specifications.
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