The STGW50H60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 100A. It is packaged in a TO-247 case and is suitable for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 360W. The STGW50H60DF is compliant with RoHS regulations and is available in a rail/Tube packaging with 30 units per package.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGW50H60DF technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 205ns |
| Turn-On Delay Time | 62ns |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW50H60DF Datasheet
Download the complete datasheet for Stmicroelectronics STGW50H60DF to view detailed technical specifications.
No datasheet is available for this part.