60 A, 650 V field stop trench gate IGBT with Ultrafast diode
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Stmicroelectronics STGW60H65DRF technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 650V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 650V |
| Collector-emitter Voltage-Max | 2.4V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 120A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 420W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 19ns |
| RoHS Compliant | Yes |
| Series | 600-650V IGBTs |
| Weight | 0.229281oz |
| RoHS | Compliant |
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