High-speed Trench Gate Field-Stop IGBT for demanding applications. Features 600V collector-emitter breakdown voltage and 60A continuous collector current. Offers a low 2.35V collector-emitter saturation voltage and 74ns reverse recovery time. Designed for through-hole mounting in a TO-247 package, operating from -55°C to 175°C with a maximum power dissipation of 375W.
PackageTO-247
MountingThrough Hole
Power375W
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Technical Specifications
Stmicroelectronics STGW60V60DF technical specifications.
General
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 375W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 74ns |
| RoHS Compliant | Yes |
| Series | STGW60V60DF |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGW60V60DF Datasheet
Download the complete datasheet for Stmicroelectronics STGW60V60DF to view detailed technical specifications.
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