The STGW60V60F is a 600V insulated gate bipolar transistor (IGBT) with a maximum collector current of 80A. It features a TO-247 package and is designed for through-hole mounting. The device has a maximum power dissipation of 375W and operates within a temperature range of -55°C to 175°C. The STGW60V60F is compliant with RoHS regulations and is available in a rail/Tube packaging with 30 units per package.
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Stmicroelectronics STGW60V60F technical specifications.
| Package/Case | TO-247 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 20.15mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 375W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | STGW60V60F |
| Turn-Off Delay Time | 208ns |
| Turn-On Delay Time | 60ns |
| Width | 5.15mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGW60V60F to view detailed technical specifications.
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