The STGWA60NC60WDR is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 130A. It has a maximum power dissipation of 340W and is packaged in a TO-247-3 case for through-hole mounting. The device is RoHS compliant and has a reverse recovery time of 42ns. It is designed for use in high-power applications and is part of the PowerMESH series.
Sign in to ask questions about the Stmicroelectronics STGWA60NC60WDR datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STGWA60NC60WDR technical specifications.
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Input Type | STANDARD |
| Max Collector Current | 130A |
| Max Power Dissipation | 340W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STGWA60NC60WDR to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
