N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-247 package. Features a maximum collector-emitter voltage of 1300V, maximum continuous collector current of 55A, and a maximum power dissipation of 180000mW. Offers a typical collector-emitter saturation voltage of 2.1V and operates across a temperature range of -55°C to 150°C. The 3-pin TO-247 package has a pin pitch of 5.45mm and includes a tab for enhanced thermal performance.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STGWS38IH130D technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-247
Package/Case
TO-247
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.75(Max)
Package Width (mm)
5.15(Max)
Package Height (mm)
20.15(Max)
Seated Plane Height (mm)
24.45(Max)
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-247
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
1300V
Maximum Gate Emitter Voltage
±25V
Maximum Continuous Collector Current
55A
Maximum Power Dissipation
180000mW
Typical Collector Emitter Saturation Voltage
2.1V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STGWS38IH130D Datasheet
Download the complete datasheet for Stmicroelectronics STGWS38IH130D to view detailed technical specifications.
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