N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting in a TO-3P package. Features a 1200V collector-emitter voltage, 50A continuous collector current, and 313000mW power dissipation. Operates across a -40°C to 175°C temperature range with a typical 2.15V collector-emitter saturation voltage. 3-pin configuration with an integrated tab.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-3P |
| Package/Case | TO-3P |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8(Max) |
| Package Width (mm) | 5(Max) |
| Package Height (mm) | 18.7 |
| Seated Plane Height (mm) | 23.4 |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 1200V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 50A |
| Maximum Power Dissipation | 313000mW |
| Typical Collector Emitter Saturation Voltage | 2.15V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 175°C |
| Cage Code | SCR76 |
| EU RoHS | Yes |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2002/95/EC |
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