The STGWT30V60DF is a 600V insulated gate bipolar transistor with a maximum collector current of 60A. It has a maximum power dissipation of 258W and operates within a temperature range of -55°C to 175°C. The device is mounted through a hole and is packaged in a rail or tube format. It is compliant with RoHS regulations and is not radiation hardened.
MountingThrough Hole
Power258W
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Technical Specifications
Stmicroelectronics STGWT30V60DF technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 26.7mm |
| Input Type | STANDARD |
| Length | 15.7mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 258W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 258W |
| Radiation Hardening | No |
| Reverse Recovery Time | 53ns |
| RoHS Compliant | Yes |
| Series | STGWT30V60DF |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGWT30V60DF Datasheet
Download the complete datasheet for Stmicroelectronics STGWT30V60DF to view detailed technical specifications.
No datasheet is available for this part.