The STGWT40V60DF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It has a maximum power dissipation of 283W and operates within a temperature range of -55°C to 175°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations.
MountingThrough Hole
Power283W
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Technical Specifications
Stmicroelectronics STGWT40V60DF technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Height | 26.7mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.7mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 283W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 283W |
| Radiation Hardening | No |
| Reverse Recovery Time | 41ns |
| RoHS Compliant | Yes |
| Series | STGWT40V60DF |
| Width | 5.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGWT40V60DF Datasheet
Download the complete datasheet for Stmicroelectronics STGWT40V60DF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.