High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 50A Continuous Drain Current. This device offers a low Collector Emitter Saturation Voltage of 2.5V and a maximum collector current of 80A. Designed for through-hole mounting in a TO-247-3 package, it boasts a maximum power dissipation of 260W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 43ns turn-on delay and a 170ns turn-off delay, with a 44ns reverse recovery time. This RoHS compliant component is part of the PowerMESH™ series.
PackageTO-247-3
Current Rating50A
MountingThrough Hole
Power260W
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Technical Specifications
Stmicroelectronics STGY40NC60VD technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Voltage (Vdss)
600V
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
80A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
260W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
260W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
44ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
170ns
Turn-On Delay Time
43ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGY40NC60VD Datasheet
Download the complete datasheet for Stmicroelectronics STGY40NC60VD to view detailed technical specifications.
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