High-performance Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 50A Continuous Drain Current. This device offers a low Collector Emitter Saturation Voltage of 2.5V and a maximum collector current of 80A. Designed for through-hole mounting in a TO-247-3 package, it boasts a maximum power dissipation of 260W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 43ns turn-on delay and a 170ns turn-off delay, with a 44ns reverse recovery time. This RoHS compliant component is part of the PowerMESH™ series.
PackageTO-247-3
Current Rating50A
MountingThrough Hole
Power260W
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Technical Specifications
Stmicroelectronics STGY40NC60VD technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Voltage (Vdss) | 600V |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 260W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 260W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 44ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 43ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGY40NC60VD Datasheet
Download the complete datasheet for Stmicroelectronics STGY40NC60VD to view detailed technical specifications.
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